1
C2D20120D Rev. H
C2D20120D
Silicon Carbide Schottky Diode
Zero
recovery
?
RectifieR
Features
?
1.2kV
Schottky
Rectifer
? ?
Zero
Reverse
Recovery
Zero
Forward
Recovery
? ?
High-Frequency
Operation
Temperature-Independent
Switching
Behavior
?
Extremely
Fast
Switching
?
Positive
Temperature
Coeffcient
on
VF
Benefts
?
Replace
Bipolar
with
Unipolar
Rectifers
?
Essentially
No
Switching
Losses
?
Higher
Effciency
?
Reduction
of
Heat
Sink
Requirements
?
Parallel
Devices
Without
Thermal
Runaway
Applications
?
Switch
Mode
Power
Supplies
?
Power
Factor
Correction
?
Motor
Drives
Package
TO-247-3
Maximum Ratings (T
C=25°C
unless
otherwise
specifed)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VRRM
Repetitive
Peak
Reverse
Voltage
1200
V
VRSM
Surge
Peak
Reverse
Voltage
1200
V
VDC
DC
Blocking
Voltage
1200
V
IF
Continuous
Forward
Current
(Per
Leg/Device)
14.5/29
31/62
10/20
A
TC=25?C
TC=135?C
TC=152?C
IFRM
Repetitive
Peak
Forward
Surge
Current
50*
A
TC=25?C,
tP=8.3
ms,
Half
Sine
Wave
IFSM
Non-Repetitive
Peak
Forward
Surge
Current
250*
A
TC=25?C,
tP=10
μs,
Pulse
Ptot
Power
Dissipation
(Per
Leg/Device)
312/624
135/270
W
TC=25?C
TC=110?C
TJ
,
Tstg
Operating
Junction
and
Storage
Temperature
-55 to
+175
?C
TO-247
Mounting
Torque
1
8.8
Nm
lbf-in
M3
Screw
6-32
Screw
*
Per
Leg,
**
Per
Device
Part Number
Package
Marking
C2D20120D
TO-247-3
C2D20120
VRRM
= 1200 V
IF (T
C=135?C) =
29
A**
Qc
=
122
nC**
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